导读: 50半百60第一篇《50N60》 ...
50半百60第一篇
《50N60》
HiPerFASTTM IGBT
Surface Mountable
IXGH50N60AVCESIXGH50N60ASIC25
VCE(sat)tfi
TO-247 SMD(50N60AS)
=600 V=75 A=2.7 V=275 ns
SymbolVCESVCGRVGESVGEMIC25IC90ICM
SSOA(RBSOA)PCTJTJMTstg
Test ConditionsTJ= 25°C to 150°C
TJ= 25°C to 150°C; RGE = 1 MΩContinuousTransientTC= 25°CT
C= 90°CTC= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 ΩClamped inductive load, L = 30 µHTC= 25°C
Maximum Ratings
600600±20±307550200
ICM = 100@ 0.8 VCES
250
-55 ... +150
150
-55 ... +150
300
VVVVAAAAW°C°C°C°C
C (TAB)
(50N60A)
C (TAB)
C = Collector,TAB = Collector
G = Gate,E = Emitter,
Maximum Lead and Tab temperature for soldering1.6 mm (0.062 in.) from case for 10 sMdWeight
Mounting torque, TO-247 AD
TO-247 SMDTO-247 AD
1.13/10Nm/lb.in.
46
gg
Featuresl
International standard packagesJEDEC TO-247 SMD surface
mountable and JEDEC TO-247 ADl
High frequency IGBTl
High current handling capabilityl
2nd generation HDMOSTM processl
MOS Gate turn-on-drive simplicity
Applicationsl
AC motor speed controll
DC servo and robot drivesDC choppersl
Uninterruptible power supplies (UPS)l
Switch-mode and resonant-modepower supplies
l
SymbolTest Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.typ.max.
6002.5
TJ = 25°CTJ = 125°C
52001±1002.7
VVµAmAnAV
BVCES
VGE(th)ICESIGES
VCE(sat)
ICIC
= 250 µA, VGE = 0 V= 250 µA, VCE = VGE
VCE= 0.8 • VCESVGE= 0 V
VCE= 0 V, VGE = ±20 VIC
= IC90, VGE = 15 V
Advantages
High power densityl
Suitable for surface mountingl
Switching speed for high frequencyapplicationsl
Easy to mount with 1 screw, TO-247(insulated mounting screw hole)
l
© 1996 IXYS All rights reserved
92797H(9/96)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.typ.max.
25
354000
VCE = 25 V, VGE = 0 V, f = 1 MHz
430100200
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
3580
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 30 µH,VCE = 0.8 VCES, RG = Roff = 2.7 Ω
Remarks: Switching times may increasefor VCE (Clamp) > 0.8 • VCES, higherTJ or increased RG
Inductive load, TJ = 125°CIC = IC90, VGE = 15 V, L = 30 µHVCE = 0.8 VCES, RG = Roff = 2.7 ΩRemarks: Switching times may increasefor VCE (Clamp) > 0.8 • VCES,higher TJ or increased R
G
502102002754.85024032806009.6
40025050100
S
TO-247 AD Outline
gfsCiesCoesCresQgQgeQgctd(on)tritd(off)tfiEofftd(on)triEontd(off)tfiEoffRthJCRthCK
IC= IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
pFpFpFnCnCnCnsnsnsnsmJnsnsmJnsnsmJ0.50K/W
TO-247 SMD Outline
0.25K/W
Min. Recommended Footprint
(Dimensions in inches and (mm))
1.Gate2.Collector3.Emitter4.Collector
AA1A2bb1CDEeLL1L2L3L4ØPQRS
MillimeterMin.Max.4.835.212.292.541.912.161.141.910.6120.8015.755.454.902.702.100.001.903.555.594.326.15
1.402.130.8021.3416.13BSC5.102.902.300.102.103.656.204.83BSC
InchesMin.Max..190.205.090.100.075.085.045.075.024.819.620.215.193.106.083.00.075.140.220.170.242
.055.084.031.840.635BSC.201.114.091.004.083.144.244.190BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,5924,850,072
4,881,1064,931,844
5,017,5085,034,796
5,049,9615,063,307
5,187,1175,237,481
5,486,7155,381,025
50半百60第二篇
《43.50.60轨道材料尺寸》
重型
起重型
50半百60第三篇
《APT50GN60BG中文资料》
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
• • 600V Field Stop
• Trench Gate: Low VEasy Paralleling CE(on) • •
6µs Short Circuit Capability
175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specified.
SymbolParameter
APT50GN60B(G)
UNITVCESCollector-Emitter Voltage600VGate-Emitter Voltage
±30Volts
GEIC1@ TC = 25°C107IC2Continuous Collector Current @ TC = 110°C64Amps
ICMC = 175°C150SSOASwitching Safe Operating Area @ TJ = 175°C150A @ 600V
PDTotal Power Dissipation
366WattsTJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 175TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
°C
SymbolCharacteristic / Test Conditions
MIN TYP MAXUnits
V(BR)CESCollector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)600
VGE(TH)Gate Threshold Voltage (VCE = VGE, IC = 800µA, Tj = 25°C)5.0 5.8 6.5 Volts
VCollector-Emitter On Voltage (VCE(ON)
GE = 15V, IC = 50A, Tj = 25°C)1.05 1.45 1.85
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C) 1.7 ICollector Cut-off Current (VCE = 600V, VGE = 0V, Tj 25CESCollector Cut-off Current (VCE = 600V, VGE = 0V, TµA
j TBDIGESGate-Emitter Leakage Current (VGE = ±20V) 600
nARG(int)
Intergrated Gate Resistor
N/A
Ω
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website -
050-7612 Rev B 7-2005
DYNAMIC CHARACTERISTICS
SymbolCiesCoesresVGEPQgQgeQgcSSOASCSOAd(on)d(off)tfEon1Eon2d(on)trd(off)tfEon1Eon2EoffEofftr
CharacteristicInput CapacitanceOutput Capacitance
Reverse Transfer CapacitanceGate-to-Emitter Plateau VoltageGate-Emitter Charge
Gate-Collector ("Miller") ChargeSwitching Safe Operating AreaShort Circuit Safe Operating AreaTurn-on Delay TimeCurrent Rise TimeTurn-off Delay TimeCurrent Fall Time
Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay TimeCurrent Rise TimeTurn-off Delay Time Current Fall Time
Turn-on Switching Energy (Diode)Turn-off Switching Energy VCC = 400VVGE = 15VIC = 50ATest ConditionsCapacitanceVGE = 0V, VCE = 25V
f = 1 MHzGate ChargeVCE = 300VIC = 50AVGE = 15V
APT50GN60B(G)
MIN
TYP
MAX
UNITpFVnC
3200 125 100 9.0 325 25 175 2025 230 100 1185 1275 1565 20 25 260 140 1205 1850 2125
µJ
nsns
TJ = 175°C, RG = 4.3VGE VCC = 360V, VGE = 15V, TJ = 150°C, RG = 4.3VCC = 400VVGE = 15VIC = 50A
15V, L = 100µH,VCE = 600V150
6
A
µs
Inductive Switching (25°C)RG
= 4.3TJ = +25°C
µJ
TJ = +125°C
RG
= 4.3THERMAL AND MECHANICAL CHARACTERISTICS
SymbolθJCRθJCWT
Characteristic
Junction to Case (IGBT)Junction to Case (DIODE)Package Weight
MIN
TYP
MAX
UNIT°C/Wgm
.41 N/A
5.9
Repetitive Rating: Pulse width limited by maximum junction temperature. For Combi devices, Ices includes both IGBT and FRED leakageson1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
050-7612 Rev B 7-2005
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
)
A( TNERRUC ROTCELLOC ,CI V
FIGURE 1, Output Characteristics(TCE, COLLECTER-TO-EMITTER VOLTAGE (V)
J = 25°C)
)A( TNERRUC ROTCELLOC ,CI V
GE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
)V( EGATLOV RETTIME-OT-ROTCELLOC ,E
CV V GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
NW1.10
ODKAER)
BD 1.05
REEZITLTAIMMER-OON1.00
T( - REOGTACTELLO0.95
LVOC ,SE CV0.90
B T
J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
)
A( TNERRUC ROTCELLOC ,CI
V, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TCEJ = 125°C)
)V( EGATLOV RETTIME-OT-ETAG ,EGV GATE CHARGE (nC)
FIGURE 4, Gate Charge
)V( EGATLOV RETTIME
-OT-ROTCELLOC ,ECVTJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
)A(TNERRUC RO
TCELLOC CD ,CI
TFIGURE 8, DC Collector Current vs Case Temperature
C, CASE TEMPERATURE (°C)
050-7612 Rev B 7-2005
25
)
sn( E20
MIT YAL15
ED NO-
N10
RUT ,)NO5(dt 0
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current 120100
)sn80( EMIT 60ESIR ,rt4020
I FIGURE 11, Current Rise Time vs Collector Current CE, COLLECTOR TO EMITTER CURRENT (A) 6000
)Jµ5000( SSOL Y4000GRENE3000 NO NR2000UT ,2NO1000
E 0
I
FIGURE 13, Turn-On Energy Loss vs Collector Current CE, COLLECTOR TO EMITTER CURRENT (A)
16000)Jµ( S14000
ESSO12000L YG10000REN8000E GN6000IHCTI4000W S 2000
R G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
350
)
sn( 300EMIT Y250ALED200 FFO-150NRUT 100
,)
FFO( d50t0
I
CE, COLLECTOR TO EMITTER CURRENT (A)FIGURE 10, Turn-Off Delay Time vs Collector Current160140120
)sn( 100EMIT 80LLAF 60,ft4020
IFIGURE 12, Current Fall Time vs Collector CurrentCE, COLLECTOR TO EMITTER CURRENT (A)4000
)Jµ( 3500SSOL3000
YGR2500ENE 2000 FFO 1500 NRUT1000 ,FFO500
E0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current6000 )Jµ5000(
SESSOL4000 YGR
E3000NE GN2000IHCTI
W1000
S 0
T, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
J050-7612 Rev B 7-2005
IC, COLLECTOR CURRENT (A)
16014012010080604020
APT50GN60B(G)
C, CAPACITANCE (F)
P
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
ZθJC, THERMAL IMPEDANCE
(°C/W)
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
110FMAX, OPERATING FREQUENCY (kHz)
50
RC MODEL
Junctiontemp. (°Case temperature. (°0.1150.00332
106
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
050-7612 Rev B 7-2005
50半百60第四篇
《IKW50N60T中文资料》
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters - Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat)
• Positive temperature coefficient in VCE(sat) • Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : Type
VCE
IC
VCE(sat),Tj=25°C
1.5V
Tj,max 175°C
Marking Code
Maximum Ratings
Package Ordering Code
Q67040S4718
Unit Collector-emitter voltage
DC collector current, limited by Tjmax TC = 25°C TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Diode forward current, limited by Tjmax TC = 25°C TC = 100°C
Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
W PtotTj °C Tstg -
260
VGE - IF
VCE
V IC
80 50
ICpuls150 100 50
IFpuls±20
V
tSCµs
1)
A
1)2)
Value limited by bond wire
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.1 Dec-04
Power Semiconductors
Thermal Resistance Characteristic
IGBT thermal resistance, junction – case
Diode thermal resistance, junction – case Thermal resistance, junction – ambient
RthJCD RthJC
Value Unit
TO-247 AC TO-247 AC
0.45 0.8 40
K/W
RthJA
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Unit
Static Characteristic
Collector-emitter breakdown voltage Collector-emitter saturation voltage
V(BR)CESVGE=0V, IC=0.2mAVCE(sat)
VGE = 15V, IC=50ATj=25°C Tj=175°C
Diode forward voltage
Gate-emitter threshold voltage Zero gate voltage collector current
VGE(th) ICES VF
VGE=0V, IF=50A Tj=25°C Tj=175°C
IC=0.8mA,VCE=VGEVCE=600V, VGE=0V Tj=25°C Tj=175°C
Gate-emitter leakage current Transconductance Integrated gate resistor
Dynamic Characteristic Input capacitance Output capacitance
Reverse transfer capacitance Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case Short circuit collector current1)
IC(SC)
VGE=15V,tSC≤5µs VCC = 400V, Tj ≤ 150°C
A
IGES gfs RGint
VCE=0V,VGE=20V VCE=20V, IC=50A
V - - - - - -
1.5 1.9 1.65 1.6 - -
2 - 2.05 - 40 1000
µA
nA S Ω
CissVCE=25V, pF
VGE=0V, Cossf=1MHz Crss QGate
VCC=480V, IC=50AVGE=15V
LEnH nC
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.1 Dec-04
Power Semiconductors
IKW50N60T TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Unit
IGBT Characteristic Turn-on delay time Rise time
Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak rate of fall of reverse recovery current during tb
td(on)ns Tj=25°C,
tr VCC=400V,IC=50A,VGE=0/15V,
td(off)RG= 7 Ω, tf Lσ1)=103nH, 1)
Cσ=39pF mJ EonEnergy losses include
Eoff“tail” and diode
reverse recovery. Ets
trrns Tj=25°C,
QrrµC VR=400V, IF=50A, dirr/dt
A/µs
Diode peak reverse recovery current IrrmA diF/dt=1280A/µs
Switching Characteristic, Inductive Load, at Tj=175 °C
Value
Unit
IGBT Characteristic Turn-on delay time Rise time
Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak rate of fall of reverse recovery current during tb
td(on)ns Tj=175°C,
tr VCC=400V,IC=50A,VGE=0/15V,
td(off)RG= 7 Ω
tf Lσ1)=103nH, 1)
Cσ=39pF mJ EonEnergy losses include
Eoff“tail” and diode
reverse recovery. Ets
trrns Tj=175°C
QrrµC VR=400V, IF=50A, dirr/dt
A/µs
Diode peak reverse recovery current IrrmA diF/dt=1280A/µs
1)
Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Rev. 2.1 Dec-04
Power Semiconductors
100Hz
100A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
1A
1kHz
10kHz
100kHz
1V10V
100V1000V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 7Ω)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C; VGE=15V)
300W
80A
Ptot, POWER DISSIPATION
250W200W150W100W50W0W25°C
IC, COLLECTOR CURRENT
60A
40A
20A
50°C75°C100°C125°C150°C
0A
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature (Tj ≤ 175°C)
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Power Semiconductors
4 Rev. 2.1 Dec-04
120A
100A80A60A40A20A0A
0V
1V
120A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
100A80A60A40A20A0A
2V3V
0V1V
2V3V4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
2.5V
80A
IC, COLLECTOR CURRENT
2.0V
60A
1.5V
40A
1.0V
20A
0.5V
0A
0.0V
0°C
50°C
100°C
150°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5 Rev. 2.1 Dec-04
50半百60第五篇
《50,60,75钢轨夹板尺寸》
各型号钢轨上夹板的孔距
43Kg的,从左至右,左端至第一个眼的距离是65.0,第一个眼至第二个眼的距离是160.0,
至第三个眼270.0,至第四个眼390.0,至第五个眼500.0,至第六个眼660.0,总长790.
50Kg的,从左至右,左端至第一个眼的距离是50.0,第一个眼至第二个眼的距离是140,
至第三个眼290,至第四个眼430,至第五个眼580.0,至第六个眼720,总长820.
60Kg的,从左至右,左端至第一个眼的距离是50.0,第一个眼至第二个眼的距离是140,
至第三个眼280.0,至第四个眼440.0,至第五个眼580.0,至第六个眼720.0,总长820.
50;60;75钢轨夹板尺寸
75KG钢轨夹板长1000毫米;宽129.4毫米;孔距中间200毫米;两侧为220;220;其次
130;130;边缘为50;50;毫米。
60KG钢轨夹板长820毫米;宽123.82毫米;孔距中间160毫米;两侧为140;140;其次
140;140;边缘为50;50毫米。
50KG钢轨夹板长820毫米;宽104.22毫米;孔距中间140毫米;两侧为150;150;其次
140;140;边缘为50;50毫米。
38及43轨夹板长790毫米;宽94.03毫米;孔距中间120毫米;两侧为110;110;其次160;
160;边缘为65;65毫米
50半百60第六篇
《第一章 50--60年代文学思潮》
50半百60第七篇
《第二章 50-60年代小说》
50半百60相关热词搜索:徐娘半老50到60岁 60比50多百分之几 50半百
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